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CSD17576Q5B Datasheet(PDF) 6 Page - Texas Instruments

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Part # CSD17576Q5B
Description  30V N-Channel NexFET Power MOSFET
Download  13 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

CSD17576Q5B Datasheet(HTML) 6 Page - Texas Instruments

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background image
0
20
40
60
80
100
120
−50
−25
0
25
50
75
100
125
150
175
200
TC - Case Temperature (ºC)
G001
0.1
1
10
100
1000
5000
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
10us
100us
1ms
10ms
DC
G001
10
100
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
0.6
0.8
1
1.2
1.4
1.6
1.8
2
−75
−50
−25
0
25
50
75
100
125
150
175
TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
G001
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
CSD17576Q5B
SLPS497 – JUNE 2014
www.ti.com
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
ID = 25 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Single Pulse Max RθJC = 1.3°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature
6
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