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CSD16340Q3T Datasheet(PDF) 3 Page - Texas Instruments |
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CSD16340Q3T Datasheet(HTML) 3 Page - Texas Instruments |
3 / 14 page CSD16340Q3 www.ti.com SLPS247E – DECEMBER 2009 – REVISED AUGUST 2014 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, IDS = 250 μA 25 V IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 20 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = +10/–8 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = 250 μA 0.6 0.85 1.1 V VGS = 2.5 V, IDS = 20 A 6.1 7.8 m Ω RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V, IDS = 20 A 4.3 5.5 m Ω VGS = 8 V, IDS = 20 A 3.8 4.5 m Ω gƒs Transconductance VDS = 15 V, IDS = 20 A 121 S DYNAMIC CHARACTERISTICS CISS Input Capacitance 1050 1350 pF COSS Output Capacitance VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz 730 950 pF CRSS Reverse Transfer Capacitance 53 69 pF Rg Series Gate Resistance 1.5 3 Ω Qg Gate Charge Total (4.5 V) 6.5 9.2 nC Qgd Gate Charge Gate-to-Drain 1.2 nC VDS = 12.5 V, ID = 20 A Qgs Gate Charge Gate-to-Source 2.1 nC Qg(th) Gate Charge at Vth 1 nC QOSS Output Charge VDS = 13 V, VGS = 0 V 15 nC td(on) Turn On Delay Time 4.8 ns tr Rise Time 16.1 ns VDS = 12.5 V, VGS = 4.5 V, ID = 20 A RG = 2 Ω td(off) Turn Off Delay Time 13.8 ns tƒ Fall Time 5.2 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage IS = 20 A, VGS = 0 V 0.8 1 V Qrr Reverse Recovery Charge 14.5 nC VDD = 13 V, IF = 20 A, di/dt = 300 A/μs trr Reverse Recovery Time 20 ns Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD16340Q3 |
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