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DS15BR401 Datasheet(PDF) 3 Page - Texas Instruments

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Part # DS15BR401
Description  4-Channel LVDS Buffer/Repeater with Pre-Emphasis
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

DS15BR401 Datasheet(HTML) 3 Page - Texas Instruments

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DS15BR400, DS15BR401
www.ti.com
SNLS224G – AUGUST 2006 – REVISED APRIL 2013
PIN DESCRIPTIONS (continued)
Pin
TQFP Pin
WQFN Pin
I/O, Type
Description
Name
Number
Number
DIFFERENTIAL OUTPUTS
OUT0+
48
32
O, LVDS
Channel 0 inverting and non-inverting differential outputs. (1)
OUT0
47
31
OUT1+
46
30
O, LVDS
Channel 1 inverting and non-inverting differential outputs. (1)
OUT1
45
29
OUT2+
42
28
O, LVDS
Channel 2 inverting and non-inverting differential outputs. (1)
OUT2
41
27
OUT3+
40
26
O, LVDS
Channel 3 inverting and non-inverting differential outputs. (1)
OUT3-
39
25
DIGITAL CONTROL INTERFACE
PWDN
12
8
I, LVTTL
A logic low at PWDN activates the hardware power down mode (all channels).
PEM
2
2
I, LVTTL
Pre-emphasis Control Input (affects all Channels)
POWER
VDD
3, 4, 5, 7, 10,
3, 4, 6, 7, 20,
I, Power
VDD = 3.3V, ±10%
11, 28, 29, 32,
21
33
GND
8, 9, 17, 18, 23,
5 (2)
I, Ground
Ground reference for LVDS and CMOS circuitry. For the WQFN package, the
24, 37, 38, 43,
DAP is used as the primary GND connection to the device in addition to the pin
44
numbers listed. The DAP is the exposed metal contact at the bottom of the
WQFN-32 package. It should be connected to the ground plane with at least 4
vias for optimal AC and thermal performance.
N/C
1,6, 25, 26, 27,
1, 17,
No Connect
30, 31, 34, 35,
18,19,22, 23,
36
24
(1)
The LVDS outputs do not support a multidrop (BLVDS) environment. The LVDS output characteristics of the DS15BR400 and
DS15BR401 are optimized for point-to-point backplane and cable applications.
(2)
Note that for the WQFN package the GND is connected thru the DAP on the back side of the WQFN package in addition to the actual
pin numbers listed.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Copyright © 2006–2013, Texas Instruments Incorporated
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