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MBR2065CT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR2065CT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor Product Specification isc website:www.iscsemi.cn 1 Schottky Barrier Rectifier MBR2065CT FEATURES · Dual Rectifier Conduction, Positive Center Tap · Metal Silicon Junction, Majority Carrier Conduction · Low Power Loss/High Efficiency · High Current Capability, Low Forward Voltage Drop · High Surge Capacity · Guarding for Overvoltage protection · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications MECHANICAL CHARACTERISTICS · Case: Epoxy, Molded · Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable · High Temperature Soldering Guaranteed: 250℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM DC Blocking Voltage 65 V IF(AV) Average Rectified Forward Current TC= 125℃ 20 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 250 A TJ Junction Temperature 170 ℃ Tstg Storage Temperature Range -50~170 ℃ |
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