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DAC7545GLU Datasheet(PDF) 3 Page - Texas Instruments |
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DAC7545GLU Datasheet(HTML) 3 Page - Texas Instruments |
3 / 13 page DAC7545 3 SBAS150A www.ti.com ELECTRICAL CHARACTERISTICS VREF = +10V, VOUT 1 = 0V, and ACOM = DCOM, unless otherwise specified. NOTES: (1) Temperature ranges—J, K, L, and GL: –40 °C to +85°C. (2) This includes the effect of 5ppm max, gain TC. (3) Ensured but not tested. (4) DB 0-DB11 = 0V to VDD or VDD to 0V. (5) Typical. (6) Minimum. (7) Logic inputs are MOS gates. Typical input current (+25°C) is less than 1nA. (8) Sample tested at +25°C to ensure compliance. DAC7545 VDD = +5V VDD = +15V PARAMETER GRADE TA = +25°CTMAX-TMIN(1) TA = +25°CTMAX-TMIN(1) UNITS TEST CONDITIONS/COMMENTS STATIC PERFORMANCE Resolution All 12 12 12 12 Bits Accuracy J ±2 ±2 ±2 ±2LSB K ±1 ±1 ±1 ±1LSB L ±1/2 ±1/2 ±1/2 ±1/2 LSB GL ±1/2 ±1/2 ±1/2 ±1/2 LSB Differential Nonlinearity J ±4 ±4 ±4 ±4 LSB 10-Bit Monotonic, TMIN to TMAX K ±1 ±1 ±1 ±1 LSB 10-Bit Monotonic, TMIN to TMAX L ±1 ±1 ±1 ±1 LSB 12-Bit Monotonic, TMIN to TMAX GL ±1 ±1 ±1 ±1 LSB 12-Bit Monotonic, TMIN to TMAX Gain Error (with internal RFB)(2) J ±20 ±20 ±25 ±25 LSB DAC register loaded with FFFH. K ±10 ±10 ±15 ±15 LSB Gain error is adjustable using L ±5 ±6 ±10 ±10 LSB the circuits in Figures 2 and 3. GL ±2 ±3 ±6 ±7LSB Gain Temperature Coefficient(3) ( ∆Gain/∆Temperature) All ±5 ±5 ±10 ±10 ppm/ °C Typical Value is 2ppm/°C for VDD = +5 DC Supply Rejection(3) ( ∆Gain/∆V DD) All 0.015 0.03 0.01 0.02 %/% ∆V DD ± 5% Output Leakage Current at Out 1 J, K, L, GL 10 50 10 50 nA DB0-DB11 = 0V; WR, CS = 0V DYNAMIC PERFORMANCE Current Settling Time(3) All 2 2 2 2 µs To 1/2 LSB. Out 1 Load = 100 Ω DAC output measured from falling edge of WR. CS = 0V. Propagation Delay(3) (from digital input All change to 90% of final analog output) 300 250 ns Out 1 Load = 100 Ω. C EXT = 13pF (4) Glitch Energy All 400 250 nV-s(5) VREF = ACOM AC Feedback at IOUT 1 All 5 5 5 5 mVp-p(5) VREF = ±10V, 10kHz Sine Wave REFERENCE INPUT Input Resistance (pin 19 to AGND) All 7 7 7 7 k Ω(6) Input Resistance TC = 300ppm/ °C(5) 25 25 25 25 k Ω AC OUTPUTS Output Capacitance(3): COUT 1 All 70 70 70 70 pF DB0-DB11 = 0V; WR, CS = 0V COUT 2 All 200 200 200 200 pF DB0-DB11 = VDD; WR, CS = 0V DIGITAL INPUTS VIH (Input HIGH Voltage) All 2.4 2.4 13.5 13.5 V(6) VIL (Input LOW Voltage) All 0.8 0.8 1.5 1.5 V IIN (Input Current)(7) All ±1 ±10 ±1 ±10 µAV IN = 0V or VDD Input Capacitance(3): DB0-DB11 All 5 5 5 5 pF VIN = 0V WR, CS All 20 20 20 20 pF VIN = 0V SWITCHING CHARACTERISTICS(8) Chip Select to Write Setup Time, tCS All 280 380 180 200 ns(6) See Timing Diagram 200 270 120 150 ns(5) Chip Select to Write Hold Time, tCH All 0 0 0 0 ns(6) Write Pulse Width, tWR All 250 400 160 240 ns(6) tCS ≥ tWR, tCH ≥ 0 175 280 100 170 ns(5) Data Setup Time, tDS All 140 210 90 120 ns(6) 100 150 60 80 ns(5) Data Hold Time, tDH All 10 10 10 10 ns(6) POWER SUPPLY, IDD All 2 2 2 2 mA All Digital Inputs VIL or VIH All 100 500 100 500 µA All Digital Inputs 0V or VDD All 10 10 10 10 µA(5) All Digital Inputs 0V or VDD |
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