16RIA Series

Bulletin I2404 rev. A 07/00

3

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dv/dt

Max. critical rate of rise of

100

off-state voltage

300 (*)

V/µs

Parameter

16RIA

Units Conditions

Blocking

P

GM

Maximum peak gate power

8.0

T

P

2.0

I

GM

Max. peak positive gate current

1.5

A

T

-V

GM

Maximum peak negative

10

V

T

gate voltage

I

GT

DC gate current required

90

T

to trigger

60

mA

T

25°C

35

T

V

GT

DC gate voltage required

3.0

T

to trigger

2.0

V

T

25°C

1.0

V

T

125°C

I

GD

DC gate current not to trigger

2.0

mA

T

V

GD

DC gate voltage not to trigger

0.2

V

T

V

W

Max. required gate trigger current/

voltage are the lowest value which

will trigger all units 6V anode-to-

cathode applied

Max. gate current/ voltage not to

trigger is the max. value which

will not trigger any unit with rated

V

Parameter

16RIA

Units Conditions

Triggering

di/dt

Max. rate of rise of turned-on

T

current

200

A/µs

Gate pulse = 20V, 15

Ω, t

180

I

160

150

Typical turn-on time

0.9

T

at = rated V

Typical reverse recovery time

4

µs

T

I

Typical turn-off time

110

T

di/dt = -10A/µs, dv/dt = 20V/µs linear to

67% V

Parameter

16RIA

Units Conditions

Switching

(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 16RIA160S90.