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BQ26220PWG4 Datasheet(PDF) 4 Page - Texas Instruments |
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BQ26220PWG4 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 26 page bq26220 SLUS521B − AUGUST 2002 − REVISED FEBRUARY 2004 4 www.ti.com VFC characteristics over recommended operating temperature and supply voltage (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VI(SR) Input voltage VSRP − VSRN −100 100 mV G(VFC) Charge/discharge gain Temperature = 25 _C, VCC = 3.6 88 91 94 Hz/V G(VCC) Supply voltage gain coefficient −100 mV < (V(SRP) − V(SRN)) < 100 mV 0.5 %/V G(TCO) Temperature gain coefficient 0.005 %/ _C INL Integrated nonlinearity −100 mV < (V(SRP) − V(SRN)) < 100 mV 0.2% 0.5% V(COS) Auto compensated offset 2.8 V ≤ VCC ≤ 4.2 V −20 −1 20 µV flash memory characteristics over recommended operating temperature and supply voltage (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Data retention 5 Years Flash programming write-cycles 10,000 Cycles t(BYTEPROG) Byte programming time 90 t(BLCKPROG) RAM-to-flash block programming time 60 µs + 30 µs/byte 1020 µs t(BLKERASE) Block-erase time 60 µs + 30 µs/byte 1020 standard serial communication (HDQ) timing specification over recommended operating temperature and supply voltage (unless otherwise noted). See Figures 1 and 2. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT T(B) Break timing 190 T(BR) Break recovery 40 T(CYCH) Host bit window 190 T(HW1) Host sends 1 32 50 µs T(HW0) Host sends 0 100 145 µs T(RSPS) bq26220 to host response 190 320 T(CYCB) bq26220 bit window 190 250 T(start−detect) (1) 5 ns T(DW1) bq26220, sends 1 32 50 s T(DW0) bq26220, sends 0 80 145 µs NOTE 1. The HDQ engine of the bq26220 interpret a 5 ns or longer glitch on HDQ as a bit start. A sufficient number of glitches at 5 ns or longer could result in incorrect data being written to the device. The HDQ line should be properly deglitched to ensure that this does not occur. |
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