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BQ25895 Datasheet(PDF) 7 Page - Texas Instruments |
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BQ25895 Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 67 page  7 bq25895 www.ti.com SLUSC88A – MARCH 2015 – REVISED MAY 2016 Product Folder Links: bq25895 Submit Documentation Feedback Copyright © 2015–2016, Texas Instruments Incorporated Electrical Characteristics (continued) VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT > VSLEEP, TJ = –40°C to +125°C and TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VBUS/BAT POWER UP V(VBUS_OP) VBUS operating range 3.9 14 V V(VBUS_UVLOZ) VBUS for active I2C, no battery 3.6 V V(SLEEP) Sleep mode falling threshold 25 65 120 mV V(SLEEPZ) Sleep mode rising threshold 130 250 370 mV V(ACOV) VBUS over-voltage rising threshold 14 14.6 V VBUS over-voltage falling threshold 13.5 14 V VBAT(UVLOZ) Battery for active I2C, no VBUS 2.3 V VBAT(DPL) Battery depletion falling threshold 2.15 2.5 V VBAT(DPLZ) Battery depletion rising threshold 2.35 2.7 V V(VBUSMIN) Bad adapter detection threshold 3.8 V I(BADSRC) Bad adapter detection current source 30 mA POWER-PATH MANAGEMENT VSYS Typical system regulation voltage I(SYS) = 0 A, VBAT> VSYS(MIN), BATFET Disabled (REG09[5]=1) VBAT+ 50 mV V Isys = 0 A, VBAT< VSYS(MIN), BATFET Disabled (REG09[5]=1) VBAT + 150 mV V VSYS(MIN) Minimum DC system voltage output VBAT< VSYS(MIN), SYS_MIN = 3.5 V (REG03[3:1]=101), ISYS= 0 A 3.50 3.65 V VSYS(MAX) Maximum DC system voltage output VBAT = 4.35 V, SYS_MIN = 3.5V (REG03[3:1]=101), ISYS= 0 A 4.40 4.42 V RON(RBFET) Top reverse blocking MOSFET(RBFET) on- resistance between VBUS and PMID TJ = –40°C to +85°C 27 38 m Ω TJ = –40°C to +125°C 27 44 m Ω RON(HSFET) Top switching MOSFET (HSFET) on-resistance between PMID and SW TJ = –40°C to +85°C 27 39 m Ω TJ = –40°C to +125°C 27 47 m Ω RON(LSFET) Bottom switching MOSFET (LSFET) on- resistance between SW and GND TJ = –40°C to +85°C 16 24 m Ω TJ = –40°C to +125°C 16 28 m Ω V(FWD) BATFET forward voltage in supplement mode BAT discharge current 10 mA 30 mV VBAT(GD) Battery good comparator rising threshold VBAT rising 3.4 3.55 3.7 V VBAT(GD_HYST) Battery good comparator falling threshold VBAT falling 100 mV |
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