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BQ24261MRGER Datasheet(PDF) 10 Page - Texas Instruments

Part # BQ24261MRGER
Description  Power-Path Management and USB-OTG Support
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

BQ24261MRGER Datasheet(HTML) 10 Page - Texas Instruments

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Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
www.ti.com
Electrical Characteristics (continued)
Circuit of Figure 7, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
% of
VBOVP_HYS
VBOVP hysteresis
Lower limit for VBAT falling from above VBOVP
1
VBATREG
tDGL(BOVP)
BOVP Deglitch
Battery entering/exiting BOVP
8
ms
ICbCLIMIT
Cycle-by-cycle current limit
VSYS shorted
4.1
4.5
4.9
A
TSHTDWN
Thermal trip
150
°C
Thermal hysteresis
10
°C
TREG
Thermal regulation threshold
Input current begins to cut off
125
°C
Safety Timer Accuracy
–20%
20%
PWM
YFF Package: Measured from IN to SW
75
120
m
Ω
Internal top MOSFET ON-
RDSON_Q1
resistance
RGE Package: Measured from IN to SW
80
135
m
Ω
YFF Package: Measured from SW to PGND
75
115
m
Ω
Internal bottom N-channel
RDSON_Q2
MOSFET ON-resistance
RGE Package: Measured from SW to PGND
80
135
m
Ω
fOSC
Oscillator frequency
1.35
1.5
1.65
MHz
DMAX
Maximum duty cycle
95%
DMIN
Minimum duty cycle
0%
BATTERY-PACK NTC MONITOR (1)
VHOT
High temperature threshold
VTS falling, 2% VDRV Hysteresis
27.3
30
32.6
%VDRV
VWARM
Warm temperature threshold
VTS falling, 2% VDRV Hysteresis
36.0
38.3
41.2
%VDRV
VCOOL
Cool temperature threshold
VTS rising, 2% VDRV Hysteresis
54.7
56.4
58.1
%VDRV
VCOLD
Low temperature threshold
VTS rising, 2% VDRV Hysteresis
58.2
60
61.8
%VDRV
TSOFF
TS Disable threshold
VTS rising, 4% VDRV Hysteresis
80
85
%VDRV
tDGL(TS)
Deglitch time on TS change
Applies to VHOT, VWARM, VCOOL and VCOLD
50
ms
I2C-COMPATIBLE INTERFACE
VIH
Input low threshold level
VPULL-UP=1.8 V, SDA and SCL
1.3
V
VIL
Input low threshold level
VPULL-UP=1.8 V, SDA and SCL
0.4
V
VOL
Output low threshold level
IL=5 mA, sink current
0.4
V
IBIAS
High-Level leakage current
VPULL-UP=1.8 V, SDA and SCL
1
μA
tWATCHDOG
30
50
s
tI2CRESET
700
ms
OTG BOOST SUPPLY
Quiescent current during
IQBAT_ BOOST
3.3 V < VBAT < 4.5 V, no switching
100
µA
boost mode (BAT pin)
Battery voltage range for
VBAT falling
3.3
4.5
V
specified boost operation
Boost output voltage (to pin
VIN_BOOST
3.3 V < VBAT < 4.5 V over line and load
4.95
5.05
5.2
V
VBUS)
BOOST_ILIM = 1
1000
Maximum output current for
IBO
3.3 V < VBAT < 4.5 V
mA
boost
BOOST_ILIM = 0
500
Cycle by cycle current limit for
BOOST_ILIM = 1
4
IBLIMIT
boost (measured at low-side
3.3 V < VBAT < 4.5 V
A
BOOST_ILIM = 0
2
FET)
Overvoltage protection
VBOOSTOVP
Signals fault and exits boost mode
5.8
6
6.2
V
threshold for boost (IN pin)
Deglitch Time, VIN OVP in
tDGL(BOOST_OVP)
170
µs
Boost Mode
Upper VIN voltage threshold to
VBURST(ENT)
enter burst mode (stop
5.1
5.2
5.3
V
switching)
Lower VBUS voltage threshold
VBURST(EXIT)
to exit burst mode (start
4.9
5
5.1
V
switching)
10
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Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: bq24260 bq24261 bq24261M bq24262


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