 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BQ24298RTWR Datasheet(PDF) 6 Page - Texas Instruments |
|
|
||||||||||||||||||||||||||||||
BQ24298RTWR Datasheet(HTML) 6 Page - Texas Instruments |
|
|
6 / 51 page  bq24298 SLUSC59 – APRIL 2015 www.ti.com 7.3 Recommended Operating Conditions MIN MAX UNIT VIN Input voltage 3.9 6.2(1) V ISYS Output current (SYS) 3.5 A VBAT Battery voltage 4.4 V Fast charging current 3 A IBAT Discharging current with internal MOSFET 5.5 A TA Operating free-air temperature range –40 85 °C (1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BTST or SW pins. A tight layout minimizes switching noise. 7.4 Thermal Information RTW (WQFN) THERMAL METRIC(1) UNIT 24 PIN RθJA Junction-to-ambient thermal resistance 32.2 RθJCtop Junction-to-case (top) thermal resistance 29.8 RθJB Junction-to-board thermal resistance 9.1 °C/W ψJT Junction-to-top characterization parameter 0.3 ψJB Junction-to-board characterization parameter 9.1 RθJCbot Junction-to-case (bottom) thermal resistance 2.2 (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 7.5 Electrical Characteristics VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT QUIESCENT CURRENTS VVBUS < VUVLO, VBAT = 4.2 V, leakage between BAT and 5 µA VBUS, TJ < 85°C High-Z Mode, or no VBUS, BATFET disabled (REG07[5] = IBAT Battery discharge current (BAT, SW, SYS) 16 20 µA 1), –40°C – 85°C High-Z Mode, or no VBUS, BATFET enabled (REG07[5] = 32 55 µA 0), –40°C – 85°C VVBUS = 5 V, High-Z mode, No battery 15 30 µA VVBUS > VUVLO, VVBUS > VBAT, converter not switching 1.5 3 mA VVBUS > VUVLO, VVBUS > VBAT, converter switching, VBAT = IVBUS Input supply current (VBUS) 4 mA 3.2 V, ISYS = 0 A VVBUS > VUVLO, VVBUS > VBAT, converter switching, charge 3.5 mA disable, VBAT = 3.8 V, ISYS = 100 µA VBAT = 4.2 V, Boost mode, IVBUS = 0 A, converter IBOOST Battery discharge current in boost mode 3.5 mA switching VBUS/BAT POWER UP VVBUS_OP VBUS operating voltage 3.9 6.2 V VVBUS_UVLOZ VVBUS rising 3.6 V VBUS for active I2C, no battery VSLEEP Sleep mode falling threshold VVBUS falling, VVBUS-VBAT 35 80 120 mV VSLEEPZ Sleep mode rising threshold VVBUS rising, VVBUS-VBAT 170 250 350 mV VACOV VBUS over-voltage rising threshold VVBUS rising 6.2 6.6 V VACOV_HYST VBUS over-voltage falling hysteresis VVBUS falling 250 mV VBAT_UVLOZ VBAT rising 2.3 V Battery for active I2C, no VBUS VBAT_DPL Battery depletion threshold VBAT falling 2.4 2.6 V VBAT_DPL_HY Battery depletion rising hysteresis VBAT rising 200 mV VVBUSMIN Bad adapter detection threshold VVBUS falling 3.8 V IBADSRC Bad adapter detection current source 30 mA 6 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: bq24298 |
Similar Part No. - BQ24298RTWR |
|
Similar Description - BQ24298RTWR |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
