CC2511F32RSPR datasheet(8/245 Pages) TI1

Part #	CC2511F32RSPR

Description	Low-Power SoC (System-on-Chip)

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Manufacturer	TI1 [Texas Instruments]

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8 / 245 page

CC2510Fx / CC2511Fx

SWRS055G

Page 8 of 236

3

Absolute Maximum Ratings

Under no circumstances must the absolute maximum ratings given in Table 2 be violated. Stress

exceeding one or more of the limiting values may cause permanent damage to the device.

Parameter

Min

Max

Units

Condition

Supply voltage (VDD)

−0.3

3.9

V

All supply pins must have the same voltage

Voltage on any digital pin

−0.3

VDD + 0.3,

max 3.9

V

Voltage on the pins RF_P, RF_N

and DCOUPL

−0.3

2.0

V

Voltage ramp-up rate

120

kV/µs

Input RF level

10

dBm

Storage temperature range

−50

150

°C

Device not programmed

Solder reflow temperature

260

°C

According to IPC/JEDEC J-STD-020D

ESD

CC2510Fx

750

V

According to JEDEC STD 22, method A114, Human

Body Model (HBM)

ESD

CC2510Fx

500

V

According to JEDEC STD 22, C101C, Charged Device

Model (CDM)

ESD

CC2511x

750

V

According to JEDEC STD 22, method A114, Human

Body Model (HBM)

ESD

CC2511x

500

V

According to JEDEC STD 22, C101C, Charged Device

Model (CDM)

Table 2: Absolute Maximum Ratings

Caution!

ESD

sensitive

device.

Precaution should be used when handling

the device in order to prevent permanent

damage.

CC2511F8 - Not Recommended for New Designs

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