Power Transistors

1

Publication date: March 2003

SJD00104AED

2SC3496, 2SC3496A

Silicon NPN triple diffusion planar type

For power switching

■ Features

• High-speed switching

• High collector-base voltage (Emitter open) V

CBO

• Satisfactory linearity of forward current transfer ratio h

FE

• N type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C

= 25°C ± 3°C

Unit: mm

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Parameter

Symbol

Rating

Unit

Collector-base voltage

2SC3496

900

V

(Emitter open)

2SC3496A

1 000

Collector-emitter voltage 2SC3496

900

V

(E-B short)

2SC3496A

1 000

Collector-emitter voltage 2SC3496

800

V

(Base open)

2SC3496A

900

Emitter-base voltage (Collector open)

7V

Base current

0.3

A

Collector current

1A

Peak collector current

2A

Collector power

30

W

dissipation

1.3

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage

2SC3496

800

V

(Base open)

2SC3496A

900

Collector-base cutoff current

2SC3496

µA

(Emitter open)

2SC3496A

Emitter-base cutoff current (Collector open)

= 7 V, I

C

= 050

µA

Forward current transfer ratio

6



3

Collector-emitter saturation voltage

= 0.2 A, I

B

= 0.04 A

1.5

V

Base-emitter saturation voltage

1.0

V

Transition frequency

4

MHz

Turn-on time

= 0.2 A

1.0

µs

Storage time

3.0

µs

Fall time

1.0

µs

0 to 0.4

R = 0.5

(8.5)

(6.5)

(6.0)

1.3

123

1: Base

2: Collector

3: Emitter

N-G1 Package

Note) Self-supported type package is also prepared.