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2N1490 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N1490
Description  NPN SILICON HIGH POWER TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/208
Devices
Qualified Level
2N1487
2N1488
2N1489
2N1490
MAXIMUM RATINGS
Ratings
Symbol
2N1487
2N1498
2N1488
2N1490
Unit
Collector-Emitter Voltage
VCEO
40
55
Vdc
Collector-Base Voltage
VCBO
60
100
Vdc
Collector-Emitter Voltage
VCEX
60
100
Vdc
Emitter-Base Voltage
VEBO
10
Vdc
Base Current
IB
3.0
Adc
Collector Current
IC
6.0
Adc
Total Power Dissipation
@ TC = 25
0C (1)
PT
75
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
2.33
0C/W
1) Derate linearly @ 0.429 W/
0C for TC > 250C
TO-33*
(TO-204AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)CEO
40
55
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 µAdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)CBO
60
100
Vdc
Collector-Emitter Breakdown Voltage
IC = 0.5 mAdc, VEB = 1.5 Vdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)CEX
60
100
Vdc
Collector-Base Cutoff Current
VCB = 30 Vdc
ICBO
25
µAdc
Emitter-Base Cutoff Current
VEB = 10 Vdc
IEBO
25
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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