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2N1489 Datasheet(PDF) 2 Page - Microsemi Corporation

Part No. 2N1489
Description  NPN SILICON HIGH POWER TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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2N1487, 2N1488, 2N1489, 2N1490 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
IC = 1.5 Adc, VCE = 4.0 Vdc
2N1487, 2N1488
2N1489, 2N1490
hFE
15
25
45
75
Collector-Emitter Saturation Voltage
IC = 1.5 Adc, IB = 300 mAdc
2N1487, 2N1488
IC = 1.5 Adc, IB = 100 mAdc
2N1489, 2N1490
VCE(sat)
3.0
1.0
Vdc
Base-Emitter Voltage
IC = 1.5 Adc, VCE = 4.0 Vdc
2N1487, 2N1488
2N1489, 2N1490
VBE(on)
3.0
2.0
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current
Transfer Ratio Cutoff Frequency
IC = 100 mAdc, VCB = 12 Vdc
f
hfb
500
kc
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
700
pF
SWITCHING CHARACTERISTICS
Turn-On / Turn-Off Time
VCC = 12 Vdc; IB0 = IB2 = 150 mAdc; IB1 = 300 mAdc; RC = 7.8 Ω
ton + toff
25
µs
(2) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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