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ADS1015-Q1

SBAS511A – JULY 2010 – REVISED MARCH 2016

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VDD to GND

–0.3

5.5

V

Analog input current

Momentary

100

mA

Continuous

10

mA

Analog input voltage to GND

–0.3

VDD + 0.3

V

SDA, SCL, ADDR, ALERT/RDY voltage to GND

–0.5

5.5

V

Maximum junction temperature

150

–60

150

°C

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic

discharge

±2000

V

Charged-device model (CDM), per AEC

Q100-011

Corner pins (1, 5, 6, and 10)

±750

All other pins

±500

Machine Model (MM), per AEC-Q100-003

±200

(1)

This parameter expresses the full-scale range of the ADC scaling. In no event should more than VDD + 0.3 V be applied to this device.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Power-supply voltage

2

5.5

V

Supply Current

Power-down current at 25ºC

0.5

2

μA

Power-down current up to 125ºC

5

Operating current at 25ºC

150

200

Operating current up to 125ºC

300

Power Dissipation

VDD = 5 V

0.9

mW

VDD = 3.3 V

0.5

VDD = 2 V

0.3

Analog input voltage

GND

VDD

V

±4.096/PGA

V

Specified ambient temperature

–40

125

°C