DMP2033UVT-13 datasheet(2/5 Pages) DIODES

Part #	DMP2033UVT-13

Description	Low On-Resistance

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Manufacturer	DIODES [Diodes Incorporated]

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DMP2033UVT

Document number: DS36617 Rev. 2 - 2

2 of 5

www.diodes.com

March 2014

DMP2033UVT

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

-20

V

Gate-Source Voltage

VGSS

±8

V

Continuous Drain Current (Note 6)

Steady

State

TA = +25°C

TA = +70°C

ID

-4.2

-3.4

A

Pulsed Drain Current (Note 6)

IDM

-10

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

PD

1.2

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

100

°C/W

Total Power Dissipation (Note 6)

PD

1.7

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

74

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to 150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-20

⎯

V

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

TJ = +25°C

IDSS

⎯

-1.0

µA

VDS = -20V, VGS = 0V

Gate-Source Leakage

IGSS

⎯

±100

nA

VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

-0.5

—

-0.9

V

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)

⎯

45

65

mΩ

VGS = -4.5V, ID = -4.2A

57

100

VGS = -2.5V, ID = -3.4A

80

200

VGS = -1.8V, ID = -2A

Forward Transfer Admittance

|Yfs|

⎯

9

⎯

S

VDS = -5V, ID = -4A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

⎯

845

⎯

pF

VDS = -15V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

⎯

72

⎯

pF

Reverse Transfer Capacitance

Crss

⎯

63

⎯

pF

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge

Qg

⎯

10.4

⎯

nC

VGS = -4.5V, VDS = -4V,

ID = -3.5A

Gate-Source Charge

Qgs

⎯

1.5

⎯

nC

Gate-Drain Charge

Qgd

⎯

1.9

⎯

nC

Turn-On Delay Time

tD(on)

⎯

6.5

⎯

ns

VDS = -4V, VGS = -4.5V,

RG = 6Ω, ID = -1A

Turn-On Rise Time

tr

⎯

13.4

⎯

ns

Turn-Off Delay Time

tD(off)

⎯

51.5

⎯

ns

Turn-Off Fall Time

tf

⎯

21.8

⎯

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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