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DMN3110S Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN3110S Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMN3110S Document number: DS31561 Rev. 3 - 2 2 of 6 www.diodes.com October 2013 © Diodes Incorporated DMN3110S Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 2.5 2.0 A Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 3.3 2.7 A Continuous Drain Current (Note 6) VGS = 10V t≦10sec TA = +25°C TA = +70°C ID 3.8 3.1 A Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 2.7 2.1 A Pulsed Drain Current (Note 7) IDM 25 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.74 W Thermal Resistance, Junction to Ambient (Note 5) RJA 173.4 °C/W Total Power Dissipation (Note 6) PD 1.3 W Thermal Resistance, Junction to Ambient (Note 6) RJA 99.1 °C/W Total Power Dissipation (Note 6) t≦10sec PD 1.8 W Thermal Resistance, Junction to Ambient (Note 6) t≦10sec RJA 72 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current @TC = +25°C IDSS - - 1.0 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 54 73 mΩ VGS = 10V, ID = 3.1A - 88 110 VGS = 4.5V, ID = 2A Forward Transfer Admittance |Yfs| - 4.8 - mS VDS = 10V, ID = 3.1A Diode Forward Voltage (Note 6) VSD - 0.75 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss - 305.8 - pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 39.9 - pF Reverse Transfer Capacitance Crss - 39.5 - pF Gate Resistance Rg - 1.4 - Ω VDS = 0V, VGS = 0V,f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg - 4.1 - nC VGS = 10V, VDS = 10V, ID = 3A Total Gate Charge (VGS = 10V) Qg - 8.6 - nC Gate-Source Charge Qgs - 1.2 - nC Gate-Drain Charge Qgd - 1.5 - nC Turn-On Delay Time tD(on) - 2.6 - ns VDD = 15V, VGS = 10V, RL = 47Ω, RG = 3Ω, Turn-On Rise Time tr - 4.6 - ns Turn-Off Delay Time tD(off) - 13.1 - ns Turn-Off Fall Time tf - 2.5 - ns Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, on 1inch square copper plate 7. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1% 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
Similar Part No. - DMN3110S |
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Similar Description - DMN3110S |
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