DMN3110S

Document number: DS31561 Rev. 3 - 2

2 of 6

www.diodes.com

October 2013

© Diodes Incorporated

DMN3110S

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Steady

State

2.5

2.0

A

Steady

State

3.3

2.7

A

t≦10sec

3.8

3.1

A

Steady

State

2.7

2.1

A

Pulsed Drain Current (Note 7)

25

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.74

W

Thermal Resistance, Junction to Ambient (Note 5)

173.4

°C/W

Total Power Dissipation (Note 6)

1.3

W

Thermal Resistance, Junction to Ambient (Note 6)

99.1

°C/W

Total Power Dissipation (Note 6) t≦10sec

1.8

W

Thermal Resistance, Junction to Ambient (Note 6) t≦10sec

72

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

1.0

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

1.0

-

3.0

V

Static Drain-Source On-Resistance

-

54

73

mΩ

-

88

110

Forward Transfer Admittance

-

4.8

-

mS

Diode Forward Voltage (Note 6)

-

0.75

1.0

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

-

305.8

-

pF

f = 1.0MHz

Output Capacitance

-

39.9

-

pF

Reverse Transfer Capacitance

-

39.5

-

pF

Gate Resistance

-

1.4

-

Ω

-

4.1

-

nC

-

8.6

-

nC

Gate-Source Charge

-

1.2

-

nC

Gate-Drain Charge

-

1.5

-

nC

Turn-On Delay Time

-

2.6

-

ns

Turn-On Rise Time

-

4.6

-

ns

Turn-Off Delay Time

-

13.1

-

ns

Turn-Off Fall Time

-

2.5

-

ns

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, on 1inch square copper plate

7. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.