Philips Semiconductors

Product data

NE57811

Advanced DDR memory termination power

with shutdown

2003 Apr 02

4

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Output voltage

–

–

V

Output voltage accuracy (Note 4)

–15

–

+15

mV

Supply voltage

1.6

–

3.6

V

Supply current

–

14

30

mA

Standby quiescent current

Standby asserted

–

1.2

1.35

mA

Output current

–3.5

–

+3.5

A

–2.5

–

+2.5

A

Load regulation

–

±6

–

mV

–18

–

+18

mV

Load capacitance (Note 2)

Stable operation

–

100

–

µF

Reference Out

RefOut

Voltage reference out (Note 3)

IrefOut = 0 A; source or sink

–15

+15

mV

IrefOut

Reference Out current max

2.2

3

–

mA

Load capacitance

Stable operation

0.1

–

–

µF

Power Stage

Current limit

3.6

4.5

5.6

A

Temperature shutdown

–

+150

–

°C

Temperature shutdown hysteresis

–

20

–

°C

NOTES:

1. Limits are 100% production tested at 25

°C. Limits over the operating temperature range are guaranteed through correlation using Statistical

Quality Control (SQC) methods.

2. Ceramic capacitors only. Low ESR electrolytic capacitors are not necessary.