DMN2300U

Datasheet number: DS35309 Rev. 2 - 2

5 of 7

www.diodes.com

July 2011

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMN2300U

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

Fig. 10 Gate Threshold Variation vs. Ambient Temperature

0

0.2

0.4

0.6

0.8

1.0

1.2

I = 250µA

D

I = 1mA

D

0

0.2

0.4

0.6

0.8

1.0

1.2

Fig. 11 Diode Forward Voltage vs. Current

V

, SOURCE-DRAIN VOLTAGE (V)

SD

0

0.4

0.8

1.2

1.6

2.0

T = 25°C

A

2

4

6

8

10

12

14

16

18

20

1

10

100

1,000

Fig. 12 Typical Leakage Current

vs. Drain-Source Voltage

V

, DRAIN-SOURCE VOLTAGE (V)

DS

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = -55°C

A

1

10

100

1,000

10,000

100,000

2

4

6

8

10

12

V

, GATE-SOURCE VOLTAGE (V)

GS

Fig.13 Leakage Current vs. Gate-Source Voltage

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = -55°C

A

0

2

4

6

8

0

0.5

1

1.5

2

2.5

3

Fig. 14 Gate-Charge Characteristics

Q , TOTAL GATE CHARGE (nC)

g

V

= 15V

I = 1A

DS

D