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BST70 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BST70 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  April 1995 4 Philips Semiconductors Product specification N-channel vertical D-MOS transistor BST70A CHARACTERISTICS Tj =25 °C unless otherwise specified Drain-source breakdown voltage ID =10 µA; VGS =0 V(BR)DS min. 80 V Drain-source leakage current VDS = 60 V; VGS =0 IDSS max. 1 µA Gate-source leakage current VGS = 20 V; VDS =0 IGSS max. 100 nA Gate threshold voltage min. max. 1.5 3.5 V V ID = 1 mA; VDS = VGS VGS(th) Drain-source ON-resistance (see Fig.4) typ. max. 2.0 4.0 Ω Ω ID = 500 mA; VGS = 10 V RDS(on) Transfer admittance ID = 500 mA; VDS = 15 V Yfs typ. 300 mS Input capacitance at f = 1 MHz typ. max. 45 60 pF pF VDS = 10 V; VGS =0 Ciss Output capacitance at f = 1 MHz typ. max. 30 45 pF pF VDS = 10 V; VGS =0 Coss Feedback capacitance at f = 1 MHz typ. max. 8 12 pF pF VDS = 10 V; VGS =0 Crss Switching times (see Figs 2 and 3) ID = 500 mA; VDS = 50 V; VGS = 0 to 10 V ton toff max. max. 10 15 ns ns |
Similar Part No. - BST70 |
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Similar Description - BST70 |
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