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DMN62D1LFD-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN62D1LFD-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMN62D1LFD Document number: DS36359 Rev. 1 - 2 2 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN62D1LFD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = 4V TA = +25°C TA = +70°C ID 400 310 mA Pulsed Drain Current (Note 6) IDM 200 mA Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) PD 0.5 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) RθJA 237 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±5V, VDS = 0V — — ±500 nA VGS = ±10V, VDS = 0V — — ±2 µA VGS = ±15V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.6 — 1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 0.8 2 Ω VGS = 4V, ID = 100mA — 1 2.5 VGS = 2.5V, ID = 50mA — 1.4 3 VGS = 1.8V, ID = 50mA — 1.8 — VGS = 1.5V, ID = 10mA Forward Transfer Admittance |Yfs| — 1.8 — S VDS = 10V, ID = 200mA Diode Forward Voltage VSD — 0.8 1.3 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 36 — pF VDS = 25V, VGS = 0V, f = 1MHz Output Capacitance Coss — 4.6 — Reverse Transfer Capacitance Crss — 3.6 — Gate Resistance Rg — 59.8 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 0.55 — nC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs — 0.08 — Gate-Drain Charge Qgd — 0.12 — Turn-On Delay Time tD(on) — 2.1 — ns VGS = 10V, VDS = 30V, RL = 150Ω, RG = 25Ω, ID = 200mA Turn-On Rise Time tr — 2.8 — ns Turn-Off Delay Time tD(off) — 21 — ns Turn-Off Fall Time tf — 13.9 — ns Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
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