DMN2065UW

Document number: DS35554 Rev. 1 – 2

2 of 6

www.diodes.com

October 2011

© Diodes Incorporated

DMN2065UW

Characteristic

Symbol

Value

Units

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

Steady

State

2.8

2.3

A

t<10s

3.1

2.6

A

Steady

State

2.2

1.7

A

t<10s

2.4

1.9

A

Pulsed Drain Current (10us pulse, duty cycle=1%)

30

A

Maximum Body Diode Forward Current (Note 4)

1.2

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 4)

0.43

W

Thermal Resistance, Junction to Ambient (Note 4)

Steady state

296

°C/W

t<10s

252

°C/W

Total Power Dissipation (Note 5)

0.7

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

178

°C/W

t<10s

151

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

20

-

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Source Leakage

-

-

±1

μA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.35

-

1.0

V

Static Drain-Source On-Resistance

-

52

56

mΩ

-

59

65

-

60

93

-

75

140

Forward Transfer Admittance

-

7

-

S

Diode Forward Voltage

-

0.7

1.0

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

-

400.0

-

pF

f = 1.0MHz

Output Capacitance

-

73.8

-

pF

Reverse Transfer Capacitance

-

65.6

-

pF

Total Gate Charge

-

5.4

-

nC

Gate-Source Charge

-

0.7

-

nC

Gate-Drain Charge

-

1.4

-

nC

Turn-On Delay Time

-

3.5

-

ns

Turn-On Rise Time

-

9.7

-

ns

Turn-Off Delay Time

-

23.8

-

ns

Turn-Off Fall Time

-

7.2

-

ns

Notes:

4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.