DMN2019UTS

Document number: DS35556 Rev. 2 - 2

2 of 6

www.diodes.com

December 2012

© Diodes Incorporated

DMN2019UTS

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.78

W

Thermal Resistance, Junction to Ambient (Note 5)

161

°C/W

Thermal Resistance, Junction to Case (Note 5)

26

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

20

-

-

V

Zero Gate Voltage Drain Current

-

-

1.0

µA

Gate-Source Leakage

-

-

10

µA

Gate-Source Breakdown Voltage

±12

-

-

V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.35

-

0.95

V

Static Drain-Source On-Resistance

-

-

-

-

-

-

-

15.5

18.5

mΩ

16.5

21

17

21.5

17.5

22.5

18

23

19

24

24

31

Forward Transfer Admittance

-

13

-

S

Diode Forward Voltage

-

0.7

1.0

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

-

143

-

pF

f = 1.0MHz

Output Capacitance

-

74

-

pF

Reverse Transfer Capacitance

-

29

-

pF

Gate Resistance

-

202

-

Ω

Total Gate Charge

-

8.8

-

nC

Gate-Source Charge

-

1.4

-

nC

Gate-Drain Charge

-

3.0

-

nC

Turn-On Delay Time

-

53

-

ns

Turn-On Rise Time

-

78

-

ns

Turn-Off Delay Time

-

562

-

ns

Turn-Off Fall Time

-

234

-

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

Characteristic

Symbol

Value

Units

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

Continuous Drain Current (Note 5)

Steady

State

5.4

4.3

A

Continuous Drain Current (Note 5)

Steady

State

4.6

3.7

A

Continuous Body Diode Forward Current (Note 5)

Steady

Stat

0.9

A

Pulsed Drain Current (Note 5) 10μs pulse, duty cycle = 1%

30

A