Electronic Components Datasheet Search |
|
DMN2019UTS-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
|
DMN2019UTS-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMN2019UTS Document number: DS35556 Rev. 2 - 2 2 of 6 www.diodes.com December 2012 © Diodes Incorporated DMN2019UTS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.78 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 161 °C/W Thermal Resistance, Junction to Case (Note 5) RθJC 26 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 20 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS - - 1.0 µA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS - - 10 µA VGS = ±10V, VDS = 0V Gate-Source Breakdown Voltage BVSGS ±12 - - V VDS = 0V, IG = ±250μA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 0.35 - 0.95 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - - - - - - - 15.5 18.5 mΩ VGS = 10V, ID = 7A 16.5 21 VGS = 4.5V, ID = 7A 17 21.5 VGS = 4.0V, ID = 7A 17.5 22.5 VGS = 3.6V, ID = 6.5A 18 23 VGS = 3.1V, ID = 6.5A 19 24 VGS = 2.5V, ID = 5.5A 24 31 VGS = 1.8V, ID = 3.5A Forward Transfer Admittance |Yfs| - 13 - S VDS = 5V, ID = 5A Diode Forward Voltage VSD - 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss - 143 - pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 74 - pF Reverse Transfer Capacitance Crss - 29 - pF Gate Resistance Rg - 202 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 8.8 - nC VGS = 4.5V, VDS = 10V, ID = 6.5A Gate-Source Charge Qgs - 1.4 - nC Gate-Drain Charge Qgd - 3.0 - nC Turn-On Delay Time tD(on) - 53 - ns VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω Turn-On Rise Time tr - 78 - ns Turn-Off Delay Time tD(off) - 562 - ns Turn-Off Fall Time tf - 234 - ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 5.4 4.3 A Continuous Drain Current (Note 5) VGS = 2.5V Steady State TA = +25°C TA = +70°C ID 4.6 3.7 A Continuous Body Diode Forward Current (Note 5) Steady Stat TA = +25°C IS 0.9 A Pulsed Drain Current (Note 5) 10μs pulse, duty cycle = 1% IDM 30 A |
Similar Part No. - DMN2019UTS-13 |
|
Similar Description - DMN2019UTS-13 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |