MP4513 datasheet(4/6 Pages) TOSHIBA

Part #	MP4513

Description	TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 6 page

MP4513

2002-11-20

4

Collector current IC (A)

hFE – IC

Base current IB (mA)

VCE – IB

Collector-emitter voltage VCE (V)

Base-emitter voltage VBE (V)

IC – VBE

Collector current IC (A)

VCE (sat) – IC

8

Collector current IC (A)

VBE (sat) – IC

Common emitter

VCE = 3 V

0

0.8

1.6

2.4

3.2

4.0

2

6

4

25 −55

Tc = 100°C

Common emitter

Tc = 25°C

0

0.03

0.1

0.3

1

3

10

30

100

0.4

0.8

1.2

1.6

2.0

2.4

IC = 5 A

0.1

1

2

3

0.1

0.3

Common emitter

IC/IB = 250

0.3

1

3

10

0.5

1

3

5

10

100

25

Tc = −55°C

0.1

0.3

Common emitter

IC/IB = 250

0.3

1

3

10

0.5

1

3

5

10

100

25

Tc = −55°C

100

0.1

Common emitter

VCE = 3 V

0.3

1

3

10

30

300

500

1000

3000

5000

10000

30000

25

−55

Tc = 100°C

0.03

IC – VCE

0

0.5

IB = 0.1 mA

0.2

0.3

3

1

2

Common emitter

Tc = 25°C

2

4

6

8

10

12

2

4

6

8

10

5

8

0

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MP4513 Datasheet(PDF) 4 Page - Toshiba Semiconductor

MP4513 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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