MP4513 datasheet(4/7 Pages) TOSHIBA | TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)

Part Name

Description

MP4513

TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) ( 7 Page)

TOSHIBA

4 page

MP4513

2002-11-20

Collector current IC (A)

hFE – IC

Base current IB (mA)

VCE – IB

Collector-emitter voltage VCE (V)

Base-emitter voltage VBE (V)

IC – VBE

Collector current IC (A)

VCE (sat) – IC

Collector current IC (A)

VBE (sat) – IC

Common emitter

VCE = 3 V

0.8

1.6

2.4

3.2

4.0

25 −55

Tc = 100°C

Common emitter

Tc = 25°C

0.03

0.1

0.3

100

0.4

0.8

1.2

1.6

2.0

2.4

IC = 5 A

0.1

0.3

Common emitter

IC/IB = 250

0.3

0.5

100

Tc = −55°C

0.1

0.3

Common emitter

IC/IB = 250

0.3

0.5

100

Tc = −55°C

100

0.1

Common emitter

VCE = 3 V

0.3

300

500

1000

3000

5000

10000

30000

−55

Tc = 100°C

0.03

IC – VCE

0.5

IB = 0.1 mA

0.2

0.3

Common emitter

Tc = 25°C

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