DMN33D8LT

Document number: DS37091 Rev. 2 - 2

4 of 5

www.diodes.com

July 2014

© Diodes Incorporated

DMN33D8LT

T , JUNCTION TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

J

°

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-50

-25

0

25

50

75

100

125 150

I= 1mA

D

I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0

0.3

0.6

0.9

1.2

1.5

T = 150°C

A

T = 125°C

A

T= 85°C

A

T= 25°C

A

T = -55°C

A

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

1

10

100

1000

0

5

10

15

20

25

30

f = 1MHz

Q(nC)

Figure 10 Gate Charge

0

2

4

6

8

10

0

0.2

0.4

0.6

0.8

1

1.2

1.4

V

= 10V

I=

A

DS

D

250m

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

SOT523

Dim

Min

Max

Typ

A

0.15

0.30

0.22

B

0.75

0.85

0.80

C

1.45

1.75

1.60

D

⎯

⎯

0.50

G

0.90

1.10

1.00

H

1.50

1.70

1.60

J

0.00

0.10

0.05

K

0.60

0.80

0.75

L

0.10

0.30

0.22

M

0.10

0.20

0.12

N

0.45

0.65

0.50

α

0°

8°

⎯

All Dimensions in mm

A

M

J

L

D

B C

H

K

G

N