Electronic Components Datasheet Search |
|
DMN10H170SVT-7 Datasheet(PDF) 4 Page - Diodes Incorporated |
|
DMN10H170SVT-7 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 6 page DMN10H170SVT Document number: DS37196 Rev. 2 - 2 4 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN10H170SVT T , JUNCTION TEMPERATURE (°C) J Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 I = 250µA D V , SOURCE-DRAIN VOLTAGE (V) SD Figure 8 Diode Forward Voltage vs. Current 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1 1.2 T = 25 C A V , DRAIN-SOURCE VOLTAGE (V) DS Figure 9 Typical Junction Capacitance 1 10 100 1000 10000 0 10 20 30 40 Ciss Coss Crss f = 1MHz Q , TOTAL GATE CHARGE (nC) g Figure 10 Gate-Charge Characteristics 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 V = 80V DS I = 12.8A D V , DRAIN-SOURCE VOLTAGE (V) DS Figure 11 SOA, Safe Operation Area 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 P = 100µs W P = 1ms W P = 10ms W P = 100ms W P = 1s W P = 10s W DC RDS(on) Limited T = 150°C J (m ax ) T = 25°C A V = 10V GS Single Pulse DUT on 1 * MRP Board |
Similar Part No. - DMN10H170SVT-7 |
|
Similar Description - DMN10H170SVT-7 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |