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1N4151 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # 1N4151
Description  Ultrafast Recovery Rectifier Diodes
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

1N4151 Datasheet(HTML) 1 Page - Diotec Semiconductor

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1N4148, 1N4150, 1N4151, 1N4448
1N4148, 1N4150, 1N4151, 1N4448
Ultrafast Recovery Rectifier Diodes
Gleichrichterdioden mit ultraschnellem Sperrverzug
IFAV = 150...200 mA
VF1
< 0.54 V
Tjmax = 200°C
VRRM = 50...100 V
IFSM = 2000...4000 mA
trr
< 2...4 ns
Version 2015-11-20
~DO-35 / ~(SOD-27)
Dimensions - Maße [mm]
Typical Applications
Signal processing,
High-speed switching
Commercial grade 1)
Typische Anwendungen
Signalverarbeitung,
Schnelles Schalten
Standardausführung 1)
Features
Very high switching speed
Low junction capacitance
Low leakage current
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Extrem schnelles Schalten
Niedrige Sperrschichtkapazität
Niedriger Sperrstrom
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1
)
Taped in ammo pack
5000
Gegurtet in Ammo-Pack
Weight approx.
0.17 g
Gewicht ca.
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Maximum ratings 2)
Grenzwerte 2)
Type
Typ
Reverse voltage
Sperrspannung
VR [V]
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
1N4148
75
100
1N4150
50
50
1N4151
50
75
1N4448
75
100
Type
Typ
1N4148
1N4448
1N4150
1N4151
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
IFAV
150 mA 3)
300 mA 3)
200 mA 3)
Repetitive peak forward current
Periodischer Spitzenstrom
IFRM
500 mA 3)
600 mA 3)
500 mA 3)
Non-repetitive peak forward current
Stoßstrom-Grenzwert
tp = 1 µs
Tj = 25°C
IFSM
2000 mA
4000 mA
2000 mA
Max. power dissipation
Max. Verlustleistung
Ptot
500 mW 3)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+200°C
-50...+200°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben
3
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 1.9±0.1
Ø max 0.5
Pb
RoHS


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