Specifications and information herein are subject to change without notice.

990929TM2fXHD

Absolute Maximum Ratings / Ta=25

°C

Drain to Source Voltage

Gate to Source Voltage

Drain Current (D.C)

Drain Current (Pulse)

Channel Temperature

Storage Temperature

Allowable power Dissipation

V

V

A

A

°C

°C

W

Electrical Characteristics / Ta=25

°C

Drain to Source Breakdown Voltage

Gate to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

Cutoff Voltage

Static Drain to Source on State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-oFF Delay Time

Fall Time

Diode Forward Voltage

Switching Time Test Circuit

Elecrical Connection

VDSS

VGSS

ID

IDP

PD

Tch

Tstg

TENTATIVE

PW

≤10µS, dutycycle≤1%

Tc=25

°C

unit

Forward Transfer Admittance

Features and Applications

• Low ON-state resistance.

• Very high-speed switching.

• Low-voltage dreve.

• Micaless package facilitating easy mounting.

SANYO Electric Co., Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN

--200

±20

--12

--48

150

--55 to +150

40

min

--200

±20

--100

±10

V

V

µA

µA

--1.5

V

S

m

Ω

pF

pF

pF

ns

ns

ns

ns

--2.5

6.3

10.5

170

2400

540

260

40

120

720

310

--1.0

V

230

--1.5

V(BR)DSS

V(BR)GSS

ID=--1mA

, VGS=0

ID=

±100µA , VGS=0

IDSS

VDS=--200V , VGS=0

IGSS

VGS=

±16V , VDS=0

VGS(OFF)

VDS=--10V , ID=--1mA

| yfs |

VDS=--10V , ID=--6A

RDS(On)1

ID=--5A

, VGS=--4V

Ciss

VDS=--20V , f=1MHz

Coss

VDS=--20V , f=1MHz

Crss

VDS=--20V , f=1MHz

td(On)

tr

td(Off)

tf

VSD

IS =--1.0A

, VGS = 0

Case Outline

See Specified Test

Circuit .

2SJ406

P- Channel Silicon MOS FET

Very High-Speed Switching Applications

typ

max

unit

50

Ω

P.G

S

G

D

VOUT

VDD=--100V

VIN

ID=--6A

RL=--16.7

Ω

PW=10uS

D.C

≤1%

VIN

0V

--10V

2SJ406

TO-220 (unit:mm)

1 : Gate

2 : Drain

3 : Source

1.6

1.2

0.75

10.0

φ3.2

2.55

2.55

2.4

4.5

2.8

0.7

2.55

2.55

1

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