DMN3053L

Document number: DS36883 Rev. 2 - 2

2 of 6

www.diodes.com

April 2014

© Diodes Incorporated

DMN3053L

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±12

V

Steady

State

4.0

3.5

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

35

A

Maximum Body Diode Forward Current (Note 6)

1.5

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.76

W

0.48

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

165

°C/W

t<10s

114

°C/W

Total Power Dissipation (Note 6)

1.2

W

0.8

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

100

°C/W

t<10s

69

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

30





V

Zero Gate Voltage Drain Current





1

µA

Gate-Body Leakage





±10

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.6



1.4

V

Static Drain-Source On-Resistance



36

38

42

44

45

50

53

55

mΩ

Source-Drain Diode Forward Voltage



0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance



676



pF

f = 1.0MHz

Output Capacitance



54



pF

Reverse Transfer Capacitance



42



pF

Gate Resistance



15.5







7.3



nC



17.2



nC

Gate-Source Charge



1.2



nC

Gate-Drain Charge



0.9



nC

Turn-On Delay Time



2.0



ns

Turn-On Rise Time



5.5



ns

Turn-Off Delay Time



152



ns

Turn-Off Fall Time



32



ns

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.