CPC7556NTR datasheet(4/6 Pages) IXYS

Part #	CPC7556NTR

Description	Monolithic Construction

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Manufacturer	IXYS [IXYS Corporation]

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INTEGRATED CIRCUITS DIVISION

R04

www.ixysic.com

4

CPC7556

1.7 AC Electrical Characteristics

2

Typical Performance Data

Parameter

Conditions

Symbol

Minimum

Typical

Maximum

Units

Input Zero Bias Capacitance

V+  V = 0V

Measured from V~A to V~B

C~A~B

-4.4

12

pF

Output Zero Bias Capacitance

V~A = V~B

Measured from V+ to V

C+/

-8.3

20

pF

Bridge Zero Bias Capacitance

V+  V = 0V Measured from

V~A to V+/- and V~B to V+/-

C~A/+, C~A/,

C~B/+, C~B/

-8.5

12

pF

Thyristor Peak Pulse Discharge Energy

Single Event Over-Voltage

Discharge Energy

EPP

-

300

mJ

Thyristor Repeated Discharge Energy

Allowable Repeated Discharge

Energy, Rectified 60Hz

EAVE

--

14

mJ

2.8

2.6

2.4

2.0

1.8

1.6

-20

20

60

-40

0

40

80

Temperature (ºC)

Bridge Forward Voltage (V

F)

vs. Temperature

100

1.4

1.2

1.0

I

F=250mA

I

F=40mA

2.2

1.6

1.4

1.2

1.0

0.8

0.6

-20

20

60

-40

0

40

80

Temperature (ºC)

Diode Forward Voltage (V

F)

vs. Temperature

100

0.4

0.2

0

I

F=250mA

I

F=40mA

152

150

148

146

144

142

-20

20

60

-40

0

40

80

Temperature (ºC)

Diode Reverse Breakdown Voltage (V

RRM)

vs. Temperature

100

140

138

3.0

2.5

2.0

1.5

1.0

-20

20

60

-40

0

40

80

Temperature (ºC)

Gate Trigger Current

vs. Temperature

100

0.5

0

3.4

3.2

3.0

2.8

2.6

2.4

-20

20

60

-40

0

40

80

Temperature (ºC)

Gate Trigger Voltage

vs. Temperature

100

2.2

2.0

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