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TDA8924 Datasheet(PDF) 11 Page - NXP Semiconductors |
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TDA8924 Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 35 page 2003 Jul 28 11 Philips Semiconductors Objective specification 2 × 120 W class-D power amplifier TDA8924 12 STATIC CHARACTERISTICS VP = ±24 V; Tamb =25 °C; measured in Fig.9; unless otherwise specified. Notes 1. The circuit is DC adjusted at VP = ±12.5 V to ±30 V. 2. With respect to SGND (0 V). 3. The transition regions between standby, mute and operating mode contain hysteresis (see Fig.6). 4. With respect to VSSP1. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage note 1 ±12.5 ±24 ±30 V Iq(tot) total quiescent current no load connected − 100 − mA Istb standby supply current − 100 500 µA Mode select input: pin MODE VMODE input voltage note 2 0 − 5.5 V IMODE input current VMODE = 5.5 V −− 1000 µA Vstb input voltage for standby mode notes 2 and 3 0 − 0.8 V Vmute input voltage for mute mode notes 2 and 3 2.2 − 3.0 V Von input voltage for operating mode notes 2 and 3 4.2 − 5.5 V Audio inputs: pins IN2 −, IN2+, IN1+ and IN1− VI DC input voltage note 2 − 0 − V Amplifier outputs: pins OUT1 and OUT2 V OO(SE) SE output offset voltage operating and mute −− 150 mV ∆V OO(SE) SE variation of output offset voltage operating ↔ mute −− 80 mV VOO(BTL) BTL output offset voltage operating and mute −− 215 mV ∆V OO(BTL) BTL variation of output offset voltage operating ↔ mute −− 115 mV Stabilizer: pin STABI Vo(stab) stabilizer output voltage operating and mute; note 4 11 13 15 V Temperature protection Tprot temperature protection activation 150 −−°C Thys hysteresis on temperature protection − 20 −°C |
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