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TGL41-120A Datasheet(PDF) 1 Page - Diotec Semiconductor |
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TGL41-120A Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 4 page  TGL41-6.8 ... TGL41-440CA, TGL41-520C TGL41-6.8 ... TGL41-440CA, TGL41-520C SMD Transient Voltage Suppressor Diodes SMD Spannungs-Begrenzer-Dioden PPPM = 400 W PM(AV) = 1.0 W Tjmax = 150°C VWM = 5.5 ... 423 V VBR = 6.8 ... 520 V Version 2016-05-27 DO-213AB Plastic MELF Dimensions - Maße [mm] Type Code = VBR. Cathode mark only at unidirectional types Typ-Code = VBR. Kathoden-Markierung nur bei unidirektionalen Typen Typical Applications Over-voltage protection ESD protection Free-wheeling diodes Commercial grade 1) Typische Anwendungen Schutz gegen Überspannung ESD-Schutz Freilauf-Dioden Standardausführung 1) Features Uni- and Bidirectional versions Peak pulse power of 400 W (10/1000 µs waveform) Very fast response time Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Uni- und Bidirektionale Versionen 400 W Impuls-Verlustleistung (10/1000 µs Strom-Impuls) Sehr schnelle Ansprechzeit Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped and reeled 5000 / 13“ Gegurtet auf Rolle Weight approx. 0.12 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL = 1 For bidirectional types (suffix “C” or “CA”), electrical characteristics apply in both directions. Für bidirektionale Dioden (mit Suffix “C” oder “CA”) gelten die elektrischen Werte in beiden Richtungen. Maximum ratings 2) Grenzwerte2) Peak pulse power dissipation (10/1000 µs waveform) Impuls-Verlustleistung (Strom-Impuls 10/1000 µs) TA = 25°C PPPM 400 W 3) Steady state power dissipation – Verlustleistung im Dauerbetrieb TA = 25°C P M(AV) 1 W 4) Peak forward surge current (half sine) – Stoßstrom (Sinushalbw.) 60 Hz TA = 25°C I FSM 40 A 5) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+150°C Characteristics Kennwerte Max. instantaneous forward voltageAugenblickswert der Durchlass-Spannung I F = 25 A V BR ≤ 200 V V BR > 200 V VF VF < 3.5 V 5) < 6.5 V 5) Thermal resistance junction to ambien –Wärmewiderstand Sperrschicht – Umgebung Thermal resistance junction to terminal – Wärmewiderstand Sperrschicht − Anschluss RthA RthT < 45 K/W 4) < 10 K/W 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben 3 Non-repetitive pulse see curve I PP = f (t) / PPP = f (t) Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve I PP = f (t) / PPP = f (t) 4 Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss 5 Unidirectional diodes only – Nur für unidirektionale Dioden © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS |
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