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BUZ72 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUZ72 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel Mosfet Transistor BUZ72 ·FEATURES ·Low R DS(on) ·V GS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·High Input Impedance ·Low Drive Requirements ·Majority Carrier Device ·DESCRITION ·Designed especially for applications such as switching regulators, switching converters, motor drivers ,relay drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Plused 36 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W PDF pdfFactory Pro www.fineprint.cn |
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