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UPD166029T1J-E1-AY Datasheet(PDF) 5 Page - Renesas Technology Corp |
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UPD166029T1J-E1-AY Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 42 page µ PD166029T1J Datasheet 3. Specification R07DS1163EJ0200 Rev.2.00 Page 5 of 40 May 22, 2015 3.3 Absolute Maximum Ratings Ta=25°C, unless other specified Parameter Symbol Rating Unit Test Condition Vcc Voltage VCC 28 V Vcc Voltage at reverse battery condition -VCC -16 V RL=7.7Ω, t<2min, RIN=2kΩ, RSEN=2kΩ,RIS=1kΩ, RGND=100Ω GND Reverse current at reverse battery condition IGND(Rev) 200 mA RL=7.7Ω, t<2min Vcc voltage under Load Dump condition Vload dump 42 V RI=1Ω, RL=7.7Ω, RIS=1kΩ, RIN=2kΩ, RSEN=2kΩ, RGND=100Ω, td=400ms Load Current IL Self limited A Total power dissipation for whole device (DC) PD 1.85 W Ta=85degreeC, Device on 50mm×50mm×1.5mm epoxy PCB FR4 with 6 cm2 of 70 µm copper area Voltage at IN pin VIN -2 ~ 16 V DC RIN=2kΩ -16 At reverse battery condition, t<2min, RIN=2kΩ, RSEN=2kΩ IN pin current IIN 10 mA DC Voltage at IS pin VIS VCC V DC RIS=1kΩ -16 V At reverse battery condition, t<2min, RL=7.7Ω, RIS=1kΩ IS Reverse current at reverse battery condition IIS(Rev) -30 mA At reverse battery condition, t<2min, RL=7.7Ω Voltage at SEN pin VSEN -2 ~ 16 V DC RSEN=2kΩ -16 At reverse battery condition, t<2min RIN=2kΩ, RSEN=2kΩ SEN pin current ISEN 10 mA DC Channel Temperature Tch -40 to +150 °C Storage Temperature Tstg -55 to +150 °C ESD susceptibility VESD 2000 V HBM AEC-Q100-002 std. R=1.5kΩ, C=100pF All pin 4000 IEC61000-4-2 std. R=330Ω, C=150pF, 100nF at VCC and OUT VCC, OUT 200 V MM AEC-Q100-003 std. R=0Ω, C=200pF Inductive load switch-off energy dissipation single pulse EAS 15 mJ VCC=13.5V, Tch,start<150°C, RL=7.7Ω Inductive load switch-off energy dissipation repetitive pulse EAR 13 mJ VCC=13.5V, Tch,start=85°C, RL=7.7Ω Remark) All voltages refer to ground pin of the device |
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