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S6E2D55J0AGV20000 Datasheet(PDF) 4 Page - Cypress Semiconductor |
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S6E2D55J0AGV20000 Datasheet(HTML) 4 Page - Cypress Semiconductor |
4 / 5 page Errata Document S6E2D5 Series December 4, 2015 Document No. 002-05034 Rev. *A 4 Page Item Description 67 10. Block Diagram Signal name should be corrected as below. (Error) GE_SPCSX_0 (Correct) GE_SPCSX0 (Error) GE_HBCSX_0/1 (Correct) GE_HBCSX0/1 93 14.3 DC Characteristics “VFLASH memory Standby current” should be corrected as indicated by the shading below. (Error) Parameter Symbol Pin name Conditions Value Unit Remarks Min Typ Max VFLASH memory Standby current ICCVFLASH VCC At Standby - 15 25 μA VFLASH memory Read current At Read - 9 14 mA 40MHz 13 20 80MHz VFLASH memory write/erase current At Write/Erase - 20 25 mA (Correct) Parameter Symbol Pin name Conditions Value Unit Remarks Min Typ Max VFLASH memory Standby current ICCVFLASH VCC At Standby - 15 35 μA VFLASH memory Read current At Read - 9 14 mA 40MHz 13 20 80MHz VFLASH memory write/erase current At Write/Erase - 20 25 mA 162, 161, 162 14.4 AC Characteristics Signal name should be corrected as below. (Error) GE_SPCSX_0 (Correct) GE_SPCSX0 (Error) GE_HBCSX_0 (Correct) GE_HBCSX0 (Error) GE_HBCSX_1 (Correct) GE_HBCSX1 |
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