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NCP1031 Datasheet(PDF) 6 Page - ON Semiconductor

Part # NCP1031
Description  Low Power PWM Controller with On-Chip Power Switch and Startup Circuits for 48 V Telecom Systems
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP1031 Datasheet(HTML) 6 Page - ON Semiconductor

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NCP1030, NCP1031
http://onsemi.com
6
DC ELECTRICAL CHARACTERISTICS (VDRAIN =48 V, VCC =12 V, CT = 560 pF, VUV =3 V, VOV =2 V, VFB =2.3 V,
VCOMP =2.5 V, TJ =--40C to 125C, typical values shown are for TJ =25C unless otherwise noted.) (Note 2)
Characteristics
Symbol
Min
Typ
Max
Unit
OSCILLATOR
Frequency (CT = 560 pF, Note 3)
TJ =25C
TJ =--40C to 125C
fOSC1
275
260
300
--
325
325
kHz
Frequency (CT = 100 pF)
fOSC2
--
800
--
kHz
Charge Current (VCT =3.25 V)
ICT(C)
--
215
--
mA
Discharge Current (VCT =3.25 V)
ICT(D)
--
645
--
mA
Oscillator Ramp
Peak
Valley
Vrpk
Vrvly
--
--
3.5
3.0
--
--
V
PWM COMPARATOR
Maximum Duty Cycle
DCMAX
70
75
80
%
POWER SWITCH CIRCUIT
Power Switch Circuit On--State Resistance (ID = 100 mA)
NCP1030
TJ =25C
TJ = 125C
NCP1031
TJ =25C
TJ = 125C
RDS(on)
--
--
--
--
4.1
6.0
2.1
3.5
7.0
12
3.0
6.0
Ω
Power Switch Circuit and Startup Circuit Breakdown Voltage
(ID = 100 mA, TJ =25C)
V(BR)DS
200
--
--
V
Power Switch Circuit and Startup Circuit Off--State Leakage Current
(VDRAIN = 200 V, VUV =2.0 V)
TJ =25C
TJ = --40to125C
IDS(off)
--
--
13
--
25
50
mA
Switching Characteristics (VDS =48 V, RL = 100 Ω)
Rise Time
Fall Time
tr
tf
--
--
22
24
--
--
ns
CURRENT LIMIT AND OVER TEMPERATURE PROTECTION
Current Limit Threshold (TJ =25C)
NCP1030 (di/dt = 0.5 A/ms)
NCP1031 (di/dt = 1.0 A/ms)
ILIM
350
700
515
1050
680
1360
mA
Propagation Delay, Current Limit Threshold to Power Switch Circuit Output
(Leading Edge Blanking plus Current Limit Delay)
tPLH
--
100
--
ns
Thermal Protection (Note 4)
Shutdown Threshold (TJ Increasing)
Hysteresis
TSHDN
THYS
--
--
150
45
--
--
C
TOTAL DEVICE
Supply Current After UV Turn--On
Power Switch Enabled
Power Switch Disabled
Non--Fault condition (VFB =2.7 V)
Fault Condition (VFB =2.7 V, VUV =2.0 V)
ICC1
ICC2
ICC3
2.0
--
--
3.0
1.5
0.65
4.0
2.0
1.2
mA
2. Production testing for NCP1030DMR2 is performed at 25C only; limits at --40C and 125C are guaranteed by design.
3. Oscillator frequency can be externally synchronized to the maximum frequency of the device.
4. Guaranteed by design only.


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