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MUBW10-12A7 Datasheet(PDF) 2 Page - IXYS Corporation |
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MUBW10-12A7 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 8 page © 2001 IXYS All rights reserved 2 - 8 MUBW 10-12 A7 Output Inverter T1 - T6 Symbol Conditions Maximum Ratings V CES T VJ = 25°C to 150°C 1200 V V GES Continuous ± 20 V V GEM Transient ± 30 V I C25 T C = 25°C20 A I C80 T C = 80°C15 A RBSOA V GE = ±15 V; RG = 82 Ω; TVJ = 125°CICM = 20 A Clamped inductive load; L = 100 µH V CEK ≤ VCES t SC V CE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C10 µs (SCSOA) non-repetitive P tot T C = 25°C 105 W Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. V CE(sat) I C = 10 A; VGE = 15 V; TVJ = 25°C 2.3 2.7 V T VJ = 125°C 2.7 V V GE(th) I C = 0.4 mA; VGE = VCE 4.5 6.5 V I CES V CE = VCES; VGE = 0 V; TVJ = 25°C 0.6 mA T VJ = 125°C 0.6 mA I GES V CE = 0 V; VGE = ± 20 V 200 nA t d(on) 50 ns t r 40 ns t d(off) 290 ns t f 60 ns E on 1.2 mJ E off 1.1 mJ C ies V CE = 25 V; VGE = 0 V; f = 1 MHz 600 pF Q Gon V CE = 600V; VGE = 15 V; IC = 10 A 45 nC R thJC (per IGBT) 1.2 K/W Inductive load, T VJ = 125°C V CE = 600 V; IC = 10 A V GE = ±15 V; R G = 82 Ω Output Inverter D1 - D6 Symbol Conditions Maximum Ratings I F25 T C = 25°C17 A I F80 T C = 80°C11 A Symbol Conditions Characteristic Values min. typ. max. V F I F = 10 A; VGE = 0 V; TVJ = 25°C 2.9 V T VJ = 125°C 1.9 V I RM I F = 10 A; diF/dt = -400 A/µs; TVJ = 125°C13 A t rr V R = 600 V; VGE = 0 V 110 ns R thJC (per diode) 3.2 K/W Equivalent Circuits for Simulation Conduction D11 - D16 Rectifier Diode (typ. at T J = 125°C) V 0 = 1.11 V; R0 = 19 mΩ T1 - T6 / D1 - D6 IGBT (typ. at V GE = 15 V; TJ = 125°C) V 0 = 1.32V; R0 = 131 mΩ Free Wheeling Diode (typ. at T J = 125°C) V 0 = 1.39 V; R0 = 56 mΩ T7 / D7 IGBT (typ. at V GE = 15 V; TJ = 125°C) V 0 = 1.32 V; R0 = 131 mΩ Free Wheeling Diode (typ. at T J = 125°C) V 0 = 1.39 V; R0 = 56 mΩ Thermal Response D11 - D16 Rectifier Diode (typ.) C th1 = 0.093 J/K; Rth1 = 1.212 K/W C th2 = 0.778 J/K; Rth2 = 0.258K/W T1 - T6 / D1 - D6 IGBT (typ.) C th1 = 0.09 J/K; Rth1 = 0.954 K/W C th2 = 0.809J/K; Rth2 = 0.246 K/W Free Wheeling Diode (typ.) C th1 = 0.043 J/K; Rth1 = 2.738 K/W C th2 = 0.54 J/K; Rth2 = 0.462 K/W T7 / D7 IGBT (typ.) C th1 = 0.09 J/K; Rth1 = 0.954 K/W C th2 = 0.809 J/K; Rth2 = 0.246 K/W Free Wheeling Diode (typ.) C th1 = 0.043 J/K; Rth1 = 2.738 K/W C th2 = 0.54 J/K; Rth2 = 0.462 K/W |
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