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RJP1CS06DWA-W0 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJP1CS06DWA-W0 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page R07DS0829EJ0400R07DS0829EJ0400 Rev.4.00 Page 1 of 3 Sep 30, 2015 Preliminary Datasheet RJP1CS06DWA / RJP1CS06DWS 1250V - 100A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Tc = 25 C) High speed switching Short circuit withstands time (10 s min.) Outline 1. Gate 2. Collector (The back) 3. Emitter Die Wafer 2 C 2 1 G E 3 1 3 3 3 Absolute Maximum Ratings ( Tc = 25°C unless otherwise noted ) Item Symbol Ratings Unit Collector to emitter voltage VCES 1250 V Gate to emitter voltage VGES ±30 V Collector current Tc = 25°C IC 200 A Tc = 100°C IC 100 A Junction temperature Tj 175 Note1 C Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175 C. IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175 C. R07DS0829EJ0400 Rev.4.00 Sep 30, 2015 |
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