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JCS4N80C Datasheet(PDF) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS4N80C Datasheet(HTML) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
4 / 11 page R JCS4N80C 版本:201504C 4/11 电特性 ELECTRICAL CHARACTERISTICS 热特性 THERMAL CHARACTERISTIC 开关特性 Switching Characteristics 延迟时间 Turn-On delay time td(on) VDD=400V,ID=4A,RG=25Ω (note 4,5) - 18 40 ns 上升时间 Turn-On rise time tr - 48 100 ns 延迟时间 Turn-Off delay time td(off) - 39 80 ns 下降时间 Turn-Off Fall time tf - 38 80 ns 栅极电荷总量 Total Gate Charge Qg VDS =640V , ID=4A VGS =10V (note 4,5) - 29.5 45 nC 栅-源电荷 Gate-Source charge Qgs - 4.8 - nC 栅-漏电荷 Gate-Drain charge Qgd - 12.8 - nC 漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS - - 4 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM - - 16 A 正向压降 Drain-Source Diode Forward Voltage VSD VGS=0V, IS=4A - - 1.5 V 反向恢复时间 Reverse recovery time trr VGS=0V, IS=4A dIF/dt=100A/μs (note 4) - 580 - ns 反向恢复电荷 Reverse recovery charge Qrr - 3.8 - μC 项 目 Parameter 符 号 Symbol 最大 Max 单 位 Unit JCS4N80CC JCS4N80FC JCS4N80VC/ RC 结到管壳的热阻 Thermal Resistance, Junction to Case Rth(j-c) 0.65 0.78 0.96 ℃/W 结到环境的热阻 Thermal Resistance, Junction to Ambient Rth(j-A) 41 41 62.5 ℃/W 注释: 1:脉冲宽度由最高结温限制 2:L=0.5mH, IAS=4A, VDD=50V, RG=25 Ω,起始结温 TJ=25℃ 3:ISD ≤4A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温 TJ=25℃ 4:脉冲测试:脉冲宽度 ≤300μs,占空比≤2% 5:基本与工作温度无关 Notes: 1:Pulse width limited by maximum junction temperature 2:L=10.5mH, IAS=4A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD ≤4A,di/dt ≤200A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Wid th ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature |
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