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IRF7341 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRF7341
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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HEXFET® Power MOSFET
PD -91703
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
02/24/99
Description
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
SO -8
VDSS = 55V
RDS(on) = 0.050Ω
IRF7341
www.irf.com
1
Parameter
Max.
Units
VDS
Drain- Source Voltage
55
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
4.7
ID @ TC = 70°C
Continuous Drain Current, VGS @ 10V
3.8
A
IDM
Pulsed Drain Current

38
PD @TC = 25°C
Power Dissipation
2.0
PD @TC = 70°C
Power Dissipation
1.3
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 20
V
VGSM
Gate-to-Source Voltage Single Pulse tp<10µs
30
V
EAS
Single Pulse Avalanche Energy
‚
72
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
…
–––
62.5
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
D1
D1
D2
D2
G1
S2
G2
S1
Top V ie w
8
1
2
3
4
5
6
7




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