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3 page 
IR3101 www.irf.com 3 MOSFET Characteristics VBIAS (VCC, VB) = 15V and TA = 25oC unless otherwise specified. The VDD parameter is referenced to COM. Symbol Definition Min. Typ Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 500 - - V VIN=0V, ID=250µA IDSS Drain-to-Source leakage current - - 50 µA VDS=500V, VIN=0V RDS(on) Static drain-to-source on resistance - 0.8 1.0 Ω ID = 1.5A VSD Diode forward voltage - 0.82 0.9 V ID = 1.5A, VIN=0V RDS(on) Static drain-to-source on resistance - 1.7 2.0 Ω ID = 1.5A, TJ=125°C VSD Diode forward voltage - 0.70 0.79 V ID = 1.5A, VIN=0V, TJ=125°C EON Turn-On energy losses - 100 135 µJ EOFF Turn-Off energy losses - 5 10 µJ EREC Body-Diode reverse recovery Llosses - 10 20 µJ tRR Reverse recovery time - 105 180 ns EON Turn-On energy losses - 150 205 µJ EOFF Turn-Off energy losses - 10 17 µJ EREC Body-Diode reverse recovery Llosses - 15 35 µJ tRR Reverse recovery time - 130 230 ns Coss Output capacitance - - 100 pF VIN=0V, VDD=30V, f=1MHz IF = 1.5A VCC = 300V di/dt = 200A/ µs TJ=125°C IF = 1.5A VCC = 300V di/dt = 200A/ µs |
