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IR2110S Datasheet(PDF) 1 Page - International Rectifier |
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IR2110S Datasheet(HTML) 1 Page - International Rectifier |
1 / 18 page Features • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset • CMOS Schmitt-triggered inputs with pull-down • Cycle by cycle edge-triggered shutdown logic • Matched propagation delay for both channels • Outputs in phase with inputs Data Sheet No. PD60147 rev.U HIGH AND LOW SIDE DRIVER Product Summary VOFFSET (IR2110) 500V max. (IR2113) 600V max. IO+/- 2A / 2A VOUT 10 - 20V ton/off (typ.) 120 & 94 ns Delay Matching (IR2110) 10 ns max. (IR2113) 20ns max. www.irf.com 1 Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output chan- nels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts. IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF HIN up to 500V or 600V TO LOAD V DD V B V S HO LO COM HIN LIN V SS SD V CC LIN V DD SD V SS V CC (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. Typical Connection Packages 14-Lead PDIP IR2110/IR2113 16-Lead SOIC IR2110S/IR2113S |
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