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BUZ211 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BUZ211
Description  SOA is Power Dissipation Limited
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUZ211 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel Mosfet Transistor
BUZ211
·ELECTRICAL CHARACTERISTICS (T
C=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
500
V
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 1mA
2.1
4
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 10V; ID= 6.5A
0.8
Ω
IGSS
Gate Source Leakage Current
VGS= 20V;VDS= 0
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
250
uA
VSD
Diode Forward Voltage
IF= 18A; VGS= 0
1.9
V
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