DMG3407SSN

Document number: DS35135 Rev. 5 - 2

2 of 6

www.diodes.com

April 2012

© Diodes Incorporated

DMG3407SSN

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Steady

State

-4.0

-3.2

A

t<10s

-4.6

-3.6

A

Steady

State

-3.3

-2.6

A

t<10s

-3.9

-3.1

A

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

-30

A

Maximum Body Diode Forward Current (Note 5)

-2.0

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 4)

1.1

W

0.7

Thermal Resistance, Junction to Ambient (Note 4)

Steady state

166

°C/W

t<10s

118

Total Power Dissipation (Note 5)

1.8

W

1.1

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

98

°C/W

t<10s

71

Thermal Resistance, Junction to Case (Note 5)

18

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

-30

-

-

V

-

-

-1

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

-1.0

-1.5

-2.1

V

Static Drain-Source On-Resistance

-

39

50

mΩ

-

56

72

Forward Transfer Admittance

-

8.2

-

S

Diode Forward Voltage

-

-0.75

-1.1

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

466

582

700

pF

f = 1.0MHz

Output Capacitance

80

114

148

Reverse Transfer Capacitance

47

76

105

Gate Resistance

2

5

8

Ω

Total Gate Charge

10.6

13.3

16

nC

Total Gate Charge

5.2

6.5

8.5

Gate-Source Charge

1.3

1.7

2

Gate-Drain Charge

1.1

1.9

2.7

Turn-On Delay Time

-

6.0

-

ns

Turn-On Rise Time

-

12.9

-

Turn-Off Delay Time

-

35.4

-

Turn-Off Fall Time

-

30.7

-

Reverse Recovery Time

6.8

8.5

10.2

ns

Reverse Recovery Charge

5.5

7.0

8.5

nC

Notes:

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.