DMG2305UX

Document number: DS36196 Rev. 5 - 2

2 of 6

www.diodes.com

April 2016

© Diodes Incorporated

DMG2305UX

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Steady

State

-4.2

-3.3

A

t<10s

-5.0

-4.0

A

Pulsed Drain Current (Note 6)

-10

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

1.4

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

90

°C/W

t<10s

64

°C/W

Thermal Resistance, Junction to Case (Note 7)

33

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-20





V

Zero Gate Voltage Drain Current





-1.0

µA

Gate-Source Leakage





±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.5

—

-0.9

V

Static Drain-Source On-Resistance



40

52

m

Ω

52

100

68

200

Forward Transfer Admittance



9



S

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance



808



pF

f = 1.0MHz

Output Capacitance



85



pF

Reverse Transfer Capacitance



77



pF

Gate Resistance



15.2



Ω

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge



10.2



nC

Gate-Source Charge



1.3



nC

Gate-Drain Charge



2.2



nC

Turn-On Delay Time



10.8



ns

Turn-On Rise Time



13.7



ns

Turn-Off Delay Time



79.3



ns

Turn-Off Fall Time



34.7



ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing