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DMG2301LK Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMG2301LK Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMG2301LK Document number: DS38438 Rev. 2 - 2 2 of 7 www.diodes.com April 2016 © Diodes Incorporated DMG2301LK Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -2.4 -1.9 A Maximum Continuous Body Diode Forward Current (Note 6) IS -1.12 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -8 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.84 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 150 °C/W Total Power Dissipation (Note 6) PD 1.40 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 91 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current (TJ = +25C) IDSS -10 µA VDS = -16V, VGS = 0V Gate-Source Leakage IGSS ±10 µA VGS = 10V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -0.3 -0.6 -1.0 V VDS = VGS, ID = -250A Static Drain-Source On-Resistance RDS(ON) 136 160 mΩ VGS = -4.5V, ID = -1.0A 183 210 VGS = -2.5V, ID = -1.0A 229 298 VGS = -1.8V, ID = -0.2A Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0V, IS = -1.0A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 156 pF VDS = -6V, VGS = 0V f = 1.0MHz Output Capacitance Coss 36 pF Reverse Transfer Capacitance Crss 28 pF Gate Resistance Rg 41 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg 1.6 nC VDS = -6V, ID = -2.2A Total Gate Charge (VGS = -10V) Qg 3.4 nC Gate-Source Charge Qgs 0.3 nC Gate-Drain Charge Qgd 0.4 nC Turn-On Delay Time tD(ON) 3.2 ns VDS = -6V, VGS = -4.5V, RGEN = 6 , ID = -1A Turn-On Rise Time tR 7.4 ns Turn-Off Delay Time tD(OFF) 11.0 ns Turn-Off Fall Time tF 10.5 ns Reverse Recovery Time tRR — 6.5 — ns IF = -1.0A, di/dt = 100A/μs Reverse Recovery Charge QRR — 0.8 — nC Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
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