Electronic Components Datasheet Search |
|
HTB100-TP Datasheet(PDF) 1 Page - LEM |
|
HTB100-TP Datasheet(HTML) 1 Page - LEM |
1 / 3 page 120425/12 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com Page 1/3 I PN = 50 .. 400 A Features ● Hall effect measuring principle ● Galvanic isolation between primary and secondary circuit ● Isolation voltage 2500 V ● Low power consumption ● Wide power supply: ± 12 ..15 V ● Primary bus bar option for 50 A and 100 A version for ease of connection Advantages ● Small size and space saving ● Only one design for wide current ratings range ● High immunity to external interference. Applications ● AC variable speed drives ● Static converters for DC motor drives ● Battery supplied applications ● Uninterruptible Power Supplies (UPS) ● Switched Mode Power Supplies (SMPS) ● Power supplies for welding applications Application domain ● Industrial Current Transducer HTB 50 .. 400 - P and HTB 50 .. 100 - TP For the electronic measurement of currents: DC, AC, pulsed..., with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). Electrical data Primary nominal Primary current Type current rms measuring range I PN (A) I PM (A) ± 50 ± 150 HTB 50-P, HTB 50-TP1) ± 100 ± 300 HTB 100-P, HTB 100-TP1) ± 150 ± 450 HTB 150-P ± 200 ± 500 HTB 200-P ± 300 ± 600 HTB 300-P ± 400 ± 600 HTB 400-P V C Supply voltage (± 5 %) 2) ± 12 ..15 V I C Current consumption ± 15 mA V d Rms voltage for AC isolation test, 50 Hz, 1 min 2.5 kV R IS Isolation resistance @ 500 VDC > 500 MW V OUT Output voltage (Analog)@ ± I PN, RL = 10kW, TA = 25°C ± 4 V R OUT Output internal resistance 100 W R L Load resistance > 10 kW Accuracy - Dynamic performance data X Accuracy @ I PN, TA = 25°C (excluding offset) < ± 1 % of I PN e L Linearity error (0 .. ± I PN) < ± 1 % of I PN V OE Electrical offset voltage @ T A = 25°C < ± 30 mV V OH Hysteresis offset voltage @ I P = 0; after an excursion of 1 x I PN < ± 1 % of I PN TCV OE Temperature coefficient of VOE HTB 50-(T)P < ± 2.0 mV/K HTB 100-(T)P .. 400-P < ± 1.0 mV/K TCV OUT Temperature coefficient of VOUT (% of reading) < ± 0.1 %/K t r Response time to 90% of I PN step < 3 µs BW Frequency bandwidth (- 3 dB) 3) DC .. 50 kHz General data T A Ambient operating temperature - 40 .. + 80 °C T S Ambient storage temperature - 40 .. + 85 °C m Mass < 30 ( < 36) g Standards EN 50178 : 1997 2 pins of Ø2mm diameter are available on transducer for PCB soldering Notes : 1) -TP version is equipped with a primary bus bar. 2) Operating at ±12V ≤ Vc < ±15V will reduce the measuring range. 3) Derating is needed to avoid excessive core heating at high frequency. |
Similar Part No. - HTB100-TP |
|
Similar Description - HTB100-TP |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |