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K4H513238B-TLB0 Datasheet(PDF) 5 Page - Samsung semiconductor |
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K4H513238B-TLB0 Datasheet(HTML) 5 Page - Samsung semiconductor |
5 / 53 page - 5 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM 3.3.7 Write Interrupted by a Read & DM 3.3.8 Write Interrupted by a Precharge & DM 3.3.9 Burst Stop 3.3.10 DM masking 3.3.11 Read With Auto Precharge 3.3.12 Write With Auto Precharge 3.3.13 Auto Refresh & Self Refresh 3.3.14 Power Down 4. Command Truth Table 5. Functional Truth Table 6. Absolute Maximum Rating 7. DC Operating Conditions & Specifications 7.1 DC Operating Conditions 7.2 DC Specifications 8. AC Operating Conditions & Timming Specification 8.1 AC Operating Conditions 8.2 AC Timming Parameters & Specification 9. AC Operating Test Conditions 10. Input/Output Capacitance 11. IBIS: I/V Characteristics for Input and Output Buffers 11.1 Normal strength driver 11.2 Half strength driver( will be included in the future) 12. QFC function QFC definition QFC timming on Read Operation QFC timming on Write operation with tDQSSmax QFC timming on Write operation with tDQSSmin QFC timming example for interrupted writes operation Timing Diagram 26 27 28 29 30 31 32 33 34 35 40 40 41 42 42 43 45 45 46 46 48 49 49 49 50 50 51 52 |
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