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NP179N04TUK-E2-AY Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # NP179N04TUK-E2-AY
Description  N-channel Power MOS FET
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP179N04TUK-E2-AY Datasheet(HTML) 4 Page - Renesas Technology Corp

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NP179N04TUK
Preliminary
R07DS1248EJ0100 Rev.1.00
Page 4 of 6
Feb 12, 2015
FORWARD TRANSFER CHARACTERISTICS
0.001
0.01
0.1
1
10
1000
100
012345
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
0
1
2
3
4
–100
–50
0
50
100
150
200
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
10
1000
100
0.1
1
10
100
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
2
1
3
1
10
100
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
5
10
15
20
VGS - Gate to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
100
200
300
400
500
600
800
700
0
0.2
0.4
0.6
0.8
VDS - Drain to Source Voltage - V
0
2
1
3
VGS = 10 V
Pulsed
VGS = 10 V
Pulsed
VDS = VGS
ID = 250 μA
Pulsed
ID = 36A
90A
180A
VDS = 5 V
Pulsed
TA = –55°C
–25°C
25°C
75°C
100°C
125°C
150°C
175°C
VDS = 10 V
Pulsed
TA = –55°C
–25°C
25°C
75°C
100°C
125°C
150°C
175°C


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