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GBJ25005 Datasheet(PDF) 1 Page - Mospec Semiconductor |
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GBJ25005 Datasheet(HTML) 1 Page - Mospec Semiconductor |
1 / 2 page MOSPEC GBJ25005 THRU GBJ2510 MAXIMUM RATINGS AND ELECTRICAL CHARATERISTICS GLASS PASSIVATED BRIDGE SINGLE PHASE BRIDGE RECTIFIERS VOLTAGE 50 to 1000 Volts CURRENT 25 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Glass passivated chip junction * High case dielectric strength of 1500 VRMS * Ideal for printed circuit boards * Low Reverse Leakage Current * Surge Overload Rating to 350A Peak MECHANICAL DATA * Case: Molded plastic body * Terminal: Plated leads solderable per MIL-STD-202, Method 208 * Polarity: Molded on Body * Mounting :Through Hole for #6 Screw * Mounting Torque: 6 in-lbs max. * Weight: 6.6g * Marking:Type Number * Rating at 25℃ ambient temperature unless otherwise specified * Single phase,half wave. 60Hz, resistive or inductive load. * For capacitive load derate current by 20 % Characteristic Symbo l GBJ25005 GBJ2501 GBJ2502 GBJ2504 GBJ2506 GBJ2508 GBJ2510 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectifier Forward Current @ TC=100℃ I0) 25 A Non-Repetitive Peak Surge Current 8.3 ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 350 A Forward Voltage (per element) ( IF =10 Amp) VFM 1.05 V Peak Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 125℃) IR 10 500 uA I 2 t Rating for Fusing( t<8.3 ms) I 2t 510 A 2s Typical Junction Capacitance per Element (note2) CJ 60 pF Maximum Thermal Resistance per leg(note 3) Rθ jc 1.0 oC/W Operating and Storage Temperature Range TJ , Tstg -65 to +150 ℃ Note: NOTES: 1. Non-repetitive ,For 1>1ms and<8.3ms. 2. Measure at 1.0 Hz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element,Unit mounted 220×220×1.6mm aluminmum plate heat sink. |
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